(China (Mainland))
Product Summary
The BSM100GB120DN2 is an IGBT Power Module.
Parametrics
BSM100GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, IC: 150A when Tc=25℃; 100A when TC=80℃; (5)IPulsed collector current, tp = 1 ms, ICpuls: 300A when TC=25℃; 200A when TC=80℃; (6)Power dissipation per IGBT, TC=25℃, Ptot: 800W; (7)Chip temperature, TjL +150℃; (8)Storage temperature Tstg -40 to + 125℃; (9)Thermal resistance, chip case, RthJC: ≤0.16 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤0.3K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance : 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40 / 125 / 56 sec.
Features
BSM100GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2_B2 |
Infineon Technologies |
IGBT Modules IGBT 1200V 100A |
Data Sheet |
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BSM100GB120DN2E3256 |
Infineon Technologies |
IGBT Modules IGBT POWER MODULE |
Data Sheet |
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BSM100GB120DN2_E3254 |
Infineon Technologies |
IGBT Modules IGBT 1200V 100A |
Data Sheet |
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BSM100GB120DN2_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 100A |
Data Sheet |
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BSM100GB120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 100A |
Data Sheet |
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BSM100GB120DN2K |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2F_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 100A |
Data Sheet |
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