Product Summary

The DF300R12KE3 is an IGBT-Module.

Parametrics

DF300R12KE3 absolute maximum ratings: (1)collector emitter voltage, VCES: 1200V; (2)DC collector current, Tc= 80℃, IC, nom: 300A; Tc= 25℃, IC: 480 A; (3)repetitive peak collector current, ICRM: 600A; (4)total power dissipation, Ptot: 1470W; (5)gate emitter peak voltage, VGES: ±20V; (6)DC forward current, IF: 300A; (7)repetitive peak forward current, IFRM: 600A; (8)I2t value, I2t: 19 k A2s; (9)insulation test voltage, VISOL: 2,5KV.

Features

DF300R12KE3 features: (1)collector emitter saturation voltage, VCEsat: 1.7 to 2.15V; (2)gate threshold voltage, VGE(th): 5.0 to 6.5V; (3)gate charge, QG: 2.8μC; (4)input capacitance, Cies: 21nF; (5)collector emitter cut off current, ICES: 5mA.

Diagrams

DF300R12KE3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
DF300R12KE3
DF300R12KE3
Infineon Technologies
IGBT Transistors 1200V 300A DUAL
Data Sheet
0-6: $95.00
6-10: $85.50
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
DF30
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Data Sheet
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DF300R12KE3
DF300R12KE3
Infineon Technologies
IGBT Transistors 1200V 300A DUAL
Data Sheet
0-6: $95.00
6-10: $85.50
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